july 2013 fcpf190n60e_f152 ? n-channel mosfet ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted *drain current limited by maximum junction temperature thermal characteristics symbol parameter fcpf190n60e_f152 unit v dss drain to source voltage 600 v v gss gate to source voltage - dc 20 v - ac (f > 1 hz) 30 v i d drain current -continuous (t c = 25 o c) 20.6* a -continuous (t c = 100 o c) 13.1* i dm drain current - pulsed (note 1) 61.8* a e as single pulsed avalanche energy (note 2) 400 mj i ar avalanche current (note 1) 4.0 a e ar repetitive avalanche energy (note 1) 2.1 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns mosfet dv/dt 100 p d power dissipation (t c = 25 o c) 39 w - derate above 25 o c0.31w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fcpf190n60e_f152 unit r jc thermal resistance, junction to case 3.2 o c/w r cs thermal resistance, case to heat sink (typical) 0.5 r ja thermal resistance, junction to ambient 62.5 fcpf190n60e_f152 n-channel superfet ? ii mosfet 600 v, 20.6 a, 190 m features ? 650 v @t j = 150c ?max. r ds(on) = 190 m ? ultra low gate charge (typ. q g = 63 nc) ? low effective output capacitance (typ. c oss .eff = 178 pf) ? 100% avalanche tested aplications ? lcd / led / pdp tv lighting ? solar inverter ? ac-dc power supply description superfet ? ii mosfet is fairchild semiconductor ? ?s first gener- ation of high voltage super-junction (sj) mosfet family that is utilizing charge balance technol ogy for outstanding low on-resis- tance and lower gate charge performance. this advanced tech- nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet ? ii mosfet is suitable for various ac/dc pow er conversion for system minia- turization and higher efficiency. g s d to-220f g s d
fcpf190n60e_f152 ? n-channel mosfet www.fairchildsemi.com 2 ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0 package marking and ordering information for fairchild's definition of "green" eco status, please visit: http://www.fairchildsemi.com/c ompany/green/rohs_green.html . electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package eco status packaging type quantity fcpf190n60e fcpf190n60e_f152 to-220f green tube 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0v, i d = 10ma, t j = 25 c 600 - - v v gs = 0v, i d = 10ma, t j = 150 c 650 - - v bv dss t j breakdown voltage temperature coefficient i d = 10ma, referenced to 25 o c - 0.67 - v/ o c bv ds drain-source avalanche breakdown voltage v gs = 0v, i d = 20a - 700 - v i dss zero gate voltage drain current v ds = 480v, v gs = 0v - - 10 a v ds = 480v, t c = 125 o c--10 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-3.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 10a - 0.16 0.19 g fs forward transconductance v ds = 20v, i d = 10a -20-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2385 3175 pf c oss output capacitance - 1795 2396 pf c rss reverse transfer capacitance - 110 165 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1.hz - 42 - pf c oss eff. effective output capacitance v ds = 0v to 480v, v gs = 0v - 178 - pf q g(tot) total gate charge at 10v v ds = 380v, i d = 10a v gs = 10v (note 4) -6382nc q gs gate to source gate charge - 10 - nc q gd gate to drain ?miller? charge - 24 - nc esr equivalent series resistance f =1mhz - 5 - t d(on) turn-on delay time v dd = 380v, i d = 10a v gs = 10v, r g = 4.7 (note 4) -2356ns t r turn-on rise time - 14 38 ns t d(off) turn-off delay time - 101 212 ns t f turn-off fall time - 15 40 ns i s maximum continuous drain to source diode forward current - - 20.2 a i sm maximum pulsed drain to source diode forward current - - 60.6 a v sd drain to source diode forward voltage v gs = 0v, i sd = 10a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 10a di f /dt = 100a/ s - 308 - ns q rr reverse recovery charge - 4.8 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 4a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 10a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
fcpf190n60e_f152 ? n-channel mosfet www.fairchildsemi.com 3 ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.3 1 10 50 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v 2345678 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 102030405060 0.1 0.2 0.3 0.4 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 600 0.5 1 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 1428425670 0 2 4 6 8 10 *note: i d = 10a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc]
fcpf190n60e_f152 ? n-channel mosfet www.fairchildsemi.com 4 ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. eoss vs. drain to source voltage vs. case temperature switching capability figure 11. maximum drain current -80 -40 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 10a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0 100 200 300 400 500 600 0 2 4 6 8 10 e oss , [ j] v ds , drain to source voltage [v] 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c]
fcpf190n60e_f152 ? n-channel mosfet www.fairchildsemi.com 5 ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0 typical performance characteristics (continued) figure 12. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 110 100 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.2 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fcpf190n60e_f152 ? n-channel mosfet www.fairchildsemi.com 6 ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fcpf190n60e_f152 ? n-channel mosfet www.fairchildsemi.com 7 ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fcpf190n60e_f152 ? n-channel mosfet www.fairchildsemi.com 8 ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0 mechanical dimensions * front/back side isolat ion voltage : ac 2500v to-220f package drawings are provided as a serv ice to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on t he drawing and contact a fairch ild semiconductor representa- tive to verify or obtain the most recent revision. package s pecifications do not expand the term s of fairchild?s worldwide term s and conditions, specifically the warranty t herein, which covers fairchild products. always visit fairchild semicon ductor?s online packaging area for t he most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf220-0a3 to-220, molded, 3ld, full pack, eiaj sc91
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visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; suppl ementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fairchild?s anti-counterfeiti ng policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit part s experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality st andards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i64 tm ? ?2013 fairchild semiconductor corporation fcpf190n60e_f152 rev. c0
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